Influence of annealing atmosphere on crystallization of amorphous Si 1-x Ge x thin film by Raman spectroscopy

The influence of annealing atmosphere on the crystallization behavior of amorphous structure in a-Si1-xGex thin films was studied with Raman spectroscopy. We annealed a-Si1-xGex (x = 0, 0.14, 0.27) thin films at 800 °C under various atmosphere and observed change in Raman spectra. We confirmed that nitrogen-annealing atmosphere promotes crystallization of the a-Si film, however, the crystallization was not promoted in the annealing under Ar atmosphere and in vacuum.