Identification of Interface States and Shallow and Deep Hole Traps under NBTI Stress using Fast, Normal, and Charge-pumping Measurement Techniques

We propose an identification method of interface state density (N-it), shallow hole trap density (N-ht.S), and deep hole trap density (N-ht.D), which were generated by negative bias temperature instability (NBTI) stress. N-ht.S, N-ht.D, and N-it were decoupled into recoverable traps and permanent traps through the proposed method. We analyzed which traps among hole-trapping charges and interface states constitute the main permanent damage component and have the largest power-law exponent with various stress voltages and temperatures. The power-law exponent of each trap showed that N-ht.D and Nit lead to considerable time-dependent degradation. Moreover, based on the recovery characteristics of each trap, 31% of the total traps became permanent traps and 77% of the permanent traps were N-ht.D, which implies that N-ht.D is a crucial factor, constituting the main component of the permanent damage.