Strain dependent optical helicity in monolayer WSe 2

conference on lasers and electro optics(2018)

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摘要
We investigate optical helicity of chemical vapor deposition (CVD) grown monolayer WSe 2 samples on fused silica substrates with/without a strain control. 38 (18) % of helicity for the strain controlled (uncontrolled) sample is measured at 77 K.
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关键词
fused silica substrates,strain control,semiconductor materials,semiconductor growth,semiconductor thin films,CVD,monolayer,chemical vapor deposition,optical helicity,temperature 77.0 K,WSe2,SiO2
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