High-Performance Ingaas/Inp Photodiodes On Silicon Using Low-Temperature Wafer-Bonding
2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)（2018）
Abstract
We demonstrate back-illuminated III-V modified uni-traveling carrier photodiodes on silicon using SU-8 as the bonding layer. Responsivity at 1620nm, bandwidth, output RF power and 01P3 are 0.8A/W, 18GHz, 4dBm and 22.5dBm at 9GHz, respectively.
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Key words
high-performance InGaAs/InP photodiodes,low-temperature wafer-bonding,bonding layer,back-illuminated III-V modified uni-traveling carrier photodiodes,current 0.8 A,frequency 9.0 GHz,wavelength 1620.0 nm,bandwidth 18 GHz,InGaAs-InP,Si
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