Spalling of Thin Si Layer via Electroless and Electrodeposit-Assisted Stripping (E(2)AS) with All-Wet Process for Fabrication of Low-Cost Flexible Single-Crystalline Si Solar Cell

A novel method using an all-wet process to reduce the cost of material in Si-based devices is described, called the electroless and electrodeposit-assisted stripping (E(2)AS) process. In this approach, a highly adhesive electroless Ni nanorod seed layer is formed on the Si substrate in place of a conventional high-cost physical vapor deposition (PVD) process. Then, a highly stressed Ni film is electrodeposited as the stress layer for lift-off of the Si thin film. Using the E2AS method, a thin Si film can be repetitively detached from a Si substrate without kerf loss, reducing the solar cell manufacturing cost. (C) 2018 The Electrochemical Society.