Monolithically Integrated InAsSb-Based nBnBn Heterostructure on GaAs for Infrared Detection

IEEE Journal of Selected Topics in Quantum Electronics(2018)

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摘要
The high-operating temperature infrared photodetectors with multicolor function that are capable of monolithic integration are of increasing importance in developing the next generation of the mid-IR image sensors. Applications of these sensors include defense, medical diagnosis, environmental, and astronomical observations. We have investigated a novel InAsSb-based nBnBn heterostructure that comb...
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关键词
Gallium arsenide,Photodetectors,Temperature measurement,Temperature sensors,Heterojunctions,Semiconductor diodes,Detectors
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