Silicon based MIS photoanode for water oxidation: A comparison of RuO 2 and Ni Schottky contacts

Miroslav Mikolášek,K. Fröhlich,K. Hušeková,Juraj Racko,Vlastimil Rehacek, Filip Chymo,M. Tapajna,Ladislav Harmatha

Applied Surface Science（2018）

引用 20|浏览60

暂无评分

摘要

•Ruthenium oxide suggested as a transparent catalytic gate for MIS photoanode.•Lower Fermi level pinning observed for ruthenium oxide compared to Ni MIS structure.•Photovoltage of 0.46 V was achieved at ∼1×sun illumination.•Low overpotential 0.12 V required for 10 mA/cm2 photoanode current in 1 M KOH.

查看译文

关键词

RuO2,Ni,MIS junction,Photoanode,Water oxidation,Fermi level pinning

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要