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High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

Chia-Hsun Wu,Ping-Cheng Han,Shih-Chien Liu,Ting-En Hsieh,Franky Lumbantoruan,Yu-Hsuan Ho,Jian-You Chen,Kun-Sheng Yang,Huan-Chung Wang,Yen-Ku Lin,Po-Chun Chang,Quang Ho Luc,Yueh-Chin Lin,Edward Yi Chang

IEEE Electron Device Letters（2018）

Cited 36|Views38
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Abstract
A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped charges in the HfON charge trapping layer, leading to high positive threshold voltage (Vth) shift for the normally-OFF device. Besides, under the posi...
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Key words
Logic gates,Gallium nitride,Iron,Hafnium compounds,Aluminum oxide,HEMTs,Electron traps
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