Performance Potential of Ge CMOS Technology From a Material-Device-Circuit Perspective

Recently demonstrated CMOS circuits based on Ge nanowires (Ge-FET) promise sustained technology scaling because higher mobility Ge guarantees target ION at a lower VDD. Unfortunately, this promise is counterbalanced by the fact that Ge is a poor thermal conductor, thus, the thermal confinement of the surround-gate topology may exacerbate self-heating (SHE) and erode the intrinsic performance gain ...