An X-ray photoelectron spectroscopy depth profile study on the InGeNi/(110) cleaved GaAs structure

InGeNi ohmic contacts on n-type semi-insulating GaAs(110) cleaved surfaces were fabricated. Cleaving semiconductor single crystal ensures the obtaining of semiconductor surfaces almost ideal in terms of chemical purity and stoichiometry. The chemical depth profile of metallic layer was investigated and revealed through multiple alternating steps of Ar+ etchings and XPS (x-ray photoelectron spectroscopy) measurements. The metallic layers made of alloy of Ge, In and Ni (60 nm Ge, 60 nm In and 10 nm Ni), were obtained by thermal evaporation on cleaved surfaces in a high vacuum facility, followed by a thermal annealing at 430–450 °C for 5 min. Twelve etching sessions were required until the metal/semiconductor interface has been reached. A total of 14 etchings steps were performed during the experiment, a layer with a thickness of 140 nm being removed from the surface. The atomic concentrations of the constituent chemical elements were determined. In3d, In4d, Ga3d, Ga2p, As3d, As2p, Ni2p3/2, Ge3d, O1s and C1s spectral lines were recorded and chemical bonds within the layer were analyzed from the fittings. The formation of InxGa1-xAs type compounds and of an intermediate semiconductor layer rich in Ge atoms at the interface was highlighted. X-ray detectors InGeNi/GaAs/Al and InGeNi/GaAs/Ti were fabricated with ohmic contacts based on this contacting scheme and Schottky interfaces prepared also by evaporation on cleaved edges. Electrical characteristics have been investigated and key diode parameters determined ─ ideality factor, Schottky barrier height, series resistance. Detection capabilities of these devices were studied in an x-rays flux, provided by a Co anode x-ray source.