Effects Of Nanoepitaxial Lateral Overgrowth On Growth Of Alpha-Ga2o3 By Halide Vapor Phase Epitaxy

We demonstrate that Pd nanoparticle/single-walled carbon nanotubes (Pd-SWCNTs) can be used to improve the quality of alpha-Ga2O3 crystals using halide vapor phase epitaxy (HVPE) methods. We employed Pd-SWCNTs as the nanoepitaxial lateral overgrowth (ELOG) mask instead of typical dielectric microsize materials, such as SiNx or SiO2. Nano-ELOG Pd-SWCNTs were deposited on a (0001) buffer layer using nanospray coating. Cs-corrected TEM (transmission electron microscopy) analysis revealed that the crystal quality of regrown alpha-Ga2O3 improved owing to both the blocking of dislocations by the nano-ELOG in the Pd NPs and the dislocation bending by the inclined facets. This simple yet effective technique is believed to be applicable to various growth systems and will find diverse applications in other crystal growth processes. Published under license by AIP Publishing.