Quantum Confinement and Interface States in ZnO Nanocrystalline Thin-Film Transistors

Richard A. Chapman,Rodolfo A. Rodriguez-Davila,William G. Vandenberghe,C. L. Hinkle,Israel Mejia, Amitava Chatterjee,M. A. Quevedo-Lopez

IEEE Transactions on Electron Devices（2018）

Cited 8|Views4

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Abstract

The experimental current-voltage (ID-VG) and capacitance-voltage (C-VG) characteristics of the bottomgate/top-contact ZnO thin-film transistors (TFTs) are analyzed accounting for quantum confinement and interface state effects. All the measurements are performed on the same TFTs composed of a 45-nm-thick nanocrystallineZnO channel, indium tin oxide gate electrode, and a 21-nm-thick Al2O3 gate insu...

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Key words

Thin film transistors,Zinc oxide,II-VI semiconductor materials,Frequency measurement,Capacitance,Semiconductor device measurement,Logic gates

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