Dependences of deposition rate and OH content on concentration of added trichloroethylene in low-temperature silicon oxide films deposited using silicone oil and ozone gas

We investigated the dependences of the deposition rate and residual OH content of SiO2 films on the concentration of trichloroethylene (TCE), which was added during deposition at low temperatures of 160-260 degrees C with the reactant gases of silicone oil (SO) and O-3. The deposition rate depends on the TCE concentration and is minimum at a concentration of similar to 0.4 mol/m(3) at 200 degrees C. The result can be explained by surface and gas-phase reactions. Experimentally, we also revealed that the thickness profile is strongly affected by gas-phase reaction, in which the TCE vapor was blown directly onto the substrate surface, where it mixed with SO and O-3. Furthermore, it was found that adding TCE vapor reduces residual OH content in the SiO2 film deposited at 200 degrees C because TCE enhances the dehydration reaction. (C) 2018 The Japan Society of Applied Physics