Self-formation of a nanonet of fluorinated carbon nanowires on the Si surface by combined etching in fluorine-containing plasma
JOURNAL OF PHYSICS D-APPLIED PHYSICS(2018)
摘要
In this work, we report a technique of the self-formation of a nanonet of fluorinated carbon nanowires on the Si surface using a combined etching in fluorine-containing C4F8/Ar and SF6 plasmas. Using scanning electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy, we show that after the etching of Si in the C4F8/Ar plasma, a fluorinated carbon film of nanometer-scale thickness is formed on its surface and its formation accelerates at elevated temperatures. After a subsequent short-term etching in the SF6 plasma, the film is modified into a nanonet of self-formed fluorinated carbon nanowires.
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关键词
plasma etching,inductively coupled plasma,fluorine-containing plasma,fluorinated carbon film,nanonet fluorocarbon film,fluorinated carbon nanowires,plasma-assisted self-formation
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