Improved Ohmic Performance by the Metallic Bilayer Contact Stack of Oxygen-Incorporated La/Ultrathin TiSi x on n-Si
IEEE Transactions on Electron Devices(2018)
摘要
This paper proposes a La/ultrathin TiSix metallic bilayer contact (MBC) on moderately doped n+-Si, which can simultaneously reduce contact resistivity (ρc) and at the same time improve the contact thermal endurance. In such an MBC, the top La defines the work function (WF), whereas the ultrathin (~1 nm) TiSix (WF-transparent) interlayer acts as a Si-diffusion barrier and improves the thermal endur...
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关键词
Metals,Conductivity,Tunneling,Silicides,Performance evaluation,Schottky barriers,Doping
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