A Bandgap Reference in 65 nm CMOS with Low Threshold Voltage MOSFET

A bandgap reference circuit with both voltage output and current output is presented. Low threshold voltage MOSFET have been utilized to ensure the circuit at suitable DC operation points under extreme low temperature. Operational transconductance amplifier (OTA) has been used to achieve high DC power supply rejection rate (PSRR). Two opposite temperature coefficient resistors have been connected in series to obtain a one-order temperature independent resistor which also achieves a weak curvature compensation effect for the reference voltage generation. This bandgap reference is implemented in a 65 nm CMOS technology, occupies 0.75 mm x 67 mm including bond pads, Measured results show that this circuit can operate at supply voltage from 1.1 V to 1.3 V, and the temperature coefficient of voltage output is 30 ppm/degrees C with 60 dB PSRR (DC, 30 degrees C), and the temperature coefficient of current output is 52 ppm/degrees C with 70 dB PSRR (DC, 30 degrees C), among -55 degrees C similar to 125 degrees C without any trimming or calibration.