Design Space Exploration for Selector Diode-STTRAM Crossbar Arrays

IEEE Transactions on Magnetics(2018)

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摘要
We report a simulation-based study to understand the integration potential of selector diode (SD) with spin-transfer torque random access memory (STTRAM). SD based on metal-insulator-insulator-metal diode is considered due to features such as high-speed operation, ability to engineer dielectric interfaces and electrode barriers for low VT and bidirectional switching, and immunity to the temperatur...
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关键词
Magnetic tunneling,Schottky diodes,Switches,Robustness,Random access memory,Metals
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