An Intermediate Frequency Amplifier for High-Temperature Applications

Muhammad Waqar Hussain,Hossein Elahipanah,Stephan Schröder,Saul Rodriguez,Bengt Gunnar Malm,Mikael Östling,Ana Rusu

IEEE Transactions on Electron Devices（2018）

引用 8|浏览57

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摘要

This paper presents a two-stage small signal intermediate frequency amplifier for high-temperature communication systems. The proposed amplifier is implemented using in-house silicon carbide bipolar technology. Measurements show that the proposed amplifier can operate from room temperature up to 251 °C. At a center frequency of 54.6 MHz, the amplifier has a gain of 22 dB at room temperature, which...

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关键词

Temperature measurement,Noise measurement,Silicon carbide,Transistors,Semiconductor device measurement,Integrated circuits,Current measurement

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