Interface chemistry and surface morphology evolution study for InAs/Al 2 O 3 stacks upon in situ ultrahigh vacuum annealing

Xinglu Wang,Xiaoye Qin, Wen Wang,Yue Liu,Xiaoran Shi,Yong Sun,Chen Liu,Jiali Zhao,Guanhua Zhang,Hui Liu,Kyeongjae Cho,Rui Wu,Jiaou Wang,Sen Zhang,Robert M. Wallace,Hong Dong

Applied Surface Science（2018）

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摘要

•The elemental diffusion and desorption are detected for InAs/Al2O3 stacks.•Bubbles and pits on the InAs/Al2O3 surface are detected after PDA in UHV.•This work highlights the importance of interface passivation for InAs/Al2O3 stack.

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关键词

Elemental diffusion,Surface morphology,High-k dielectrics,InAs,Thermal stability

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