Nonideality of Negative Capacitance Ge Field-Effect Transistors Without Internal Metal Gate
IEEE Electron Device Letters(2018)
摘要
We demonstrate negative capacitance(NC) Ge field-effect transistors (FETs) utilizing the TaN/HfZrOx/SiO2 gate stack. Typical characteristics of NC transistors, including the sub-60 mV/decade subthreshold swing (SS), the gate capacitance CG peak, and the negative differential resistance effect are achieved in NC Ge FETs without internal metal gate. Significant CG peak, as the evidence of NC effect ...
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关键词
Logic gates,Capacitance,Hysteresis,Metals,Frequency measurement,Field effect transistors
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