Facile and Novel in-Plane Structured Graphene/TiO2 Nanocomposites for Memory Applications

Here, we report a simple strategy for the preparation of graphene/TiO2 nanocomposite by UV-assisted incorporation of TiO2 nanosol in graphene oxide (GO) dispersion. The proposed method is facile and of low cost without using any photocatalysts or reducing agents; this can open up a new possibility for green preparation of stable graphene dispersions in large-scale production. X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy, and transmission electron microscopy (TEM) have been used to characterize carefully the as-prepared composites and to confirm the successful preparation of the nanocomposites. The average crystallite size of TiO2 nanoparticles calculated from XRD pattern using Rietveld analysis is similar to 35 nm. TEM measurements show the adsorption of TiO2 onto graphene (G) sheets, which prevents the restacking of graphene sheets. Current-voltage and capacitance-voltage measurements were used to investigate the electrical resistive memory properties of GO, GO/TiO2, and G/TiO2 thin films. Observed results show hysteresis behavior due to the charge trapping and detrapping process, indicating that the prepared thin films exhibit an excellent resistance switching memory characteristic for G/TiO2 device.