Cmos Compatible W/Cofeb/Mgo Spin Hall Nano-Oscillators With Wide Frequency Tunability

We demonstrate low-operational-current W/Co20Fe60B20/MgO spin Hall nano-oscillators (SHNOs) on highly resistive silicon (HiR-Si) substrates. Thanks to a record high spin Hall angle of the beta-phase W (theta(SH) = -0.53), a very low threshold current density of 3.3 x 10(7) A/cm(2) can be achieved. Together with their very wide frequency tunability (7-28GHz), promoted by a moderate perpendicular magnetic anisotropy, HiR-Si/W/CoFeB based SHNOs are potential candidates for wide-band microwave signal generation. Their CMOS compatibility offers a promising route towards the integration of spintronic microwave devices with other on-chip semiconductor microwave components. Published by AIP Publishing.