High-speed mobile memory I/O interface using multi-modulation signalling

Y. Yu,G.-S. Byun

Electronics Letters(2018)

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摘要
The proposed multi-band multi-modulation I/O (MMI) for mobile memory interface consists of two RF-band and 4-PAM (pulse-amplitude modulation) transceivers for simultaneous bidirectional read/write operations on a shared single-ended 5 cm off-chip transmission line. A novel band-selective transformer is introduced to combine and split two amplitude shift keying modulated RF-bands with a 4-PAM baseb...
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关键词
amplitude shift keying,CMOS integrated circuits,pulse amplitude modulation,transformers
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