GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas

In this letter, we report on GaN-based field-effect transistors with laterally gated two-dimensional electron gas (2DEG). The drain current of the transistor is controlled solely by modulating the width of the 2DEG between buried gates. The lateral Schottky gate contact to the GaN channel layer enhances electron confinement by raising electrostatic potential below the 2DEG, improving isolation bet...