STT-MRAM for embedded memory applications from eNVM to last level cache

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)（2017）

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摘要

Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) is emerging as a leading candidate for a variety of embedded memory applications ranging from embedded NVM to working memory and last level cache. In this paper, we review recent breakthroughs that have brought perpendicular STT-MRAM to the cusp of mass production.

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关键词

STT-MRAM,memory technology,embedded memory,data retention

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