Silver Nanowire Mesh-Based Fuse Type Write-Once-Read-Many Memory

Luyao Zhu,Sujie Chen,Haoyu Zhou,Sai Peng,Qiuqi Zhang, Xiachang Zhang,Xiaojun Guo

IEEE Electron Device Letters（2018）

引用 10|浏览17

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摘要

Fuse type write-once-read-many (WORM) memories are fabricated based on silver nanowire (AgNW) meshes using simple dispensing and bar-coating processes without needing precise patterning. Compared to previous work, the AgNW mesh WORM memories can be programmed at lower voltage (2.3 V) and current (<;10 mA), and thus through near field communication by smart phones. The devices present stable “unwri...

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关键词

Grippers,Voltage measurement,Packaging,Memory management,Current measurement,Smart phones,Resistance

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