Synthesis And Characterization Of An Efficient Hole-Conductor Free Halide Perovskite Ch(3)Nh(3)Pbi(3 )Semiconductor Absorber Based Photovoltaic Device For Iot

Organometal halide perovskite (CH3N3PbI3) absorber was synthesized from CH3NH3I and PbI2 in N, N dimethylformamide by solution spin coating process. Characterization by X-ray diffraction, optical and electron microscopy studies confirmed a well-formed nano-crystalline tetragonal pervoskite structure. The synthesized CH3NH3PbI3 was used as a photo absorber material in a hole-conductor free photovoltaic device with TiO2 as an electron conductor. This configuration of the perovskite photovoltaic device exploits the role of CH3NH3PbI3 simultaneously as light absorber and hole-conducting material. We report two device configurations: (a) with a compact TiO2 buffer layer introduced between the porous TiO(2 )and FTO and (b) without the compact TiO2 layer over the FTO substrate. The simple solar cell structure FTO/TiO2/CH3NH3PbI3/Agpresented here shows good photovoltaic performance under illumination with standard AM1.5 sunlight. For the champion devices from the two structures, (a) and (b), we obtained short circuit photocurrent densities asJ(sc) = 17.4 mA/cm(2) and 19.5 mA/cm(2) , open circuit voltage V-oc = 1.0 V and 1.45 V, fill factor FF = 0.54 and 0.29 and a power conversion efficiency (PCE) of 9.39% and 8.19% respectively under solar light intensity flux of 100 mW/cm(2). We find that structure (a) offers significantly better device parameters. The results of the present work suggest a route to realize a simple, low cost and highly efficient perovskite photovoltaic device. These devices could be realized in miniaturized sensors and electronic components applied in Internet of Things (IoT). (C) The Author(s) 2018. Published by ECS.