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Solution-processed flexible NiO resistive random access memory device

Soo Jung Kim,Heon Lee,Sung Hoon Hong

Solid-State Electronics（2018）

Cited 8|Views2
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Abstract
•The direct patterning technique were developed by controlling the pressure and temperature.•The integrated nanoparticle based ReRAM device has simply fabricated on flexible substrate using solution process.•The nanoscale NiO ReRAM were measured and analyzed by c-AFM measurement.
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Key words
flexible nio,memory,random,device,solution-processed
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