Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)

We present a large-area in-situ oxide, GaN interlayer-based vertical trench MOSFET (OG-FET) with a metal organic chemical vapor deposition regrown 10-nm unintentional-doped-GaN interlayer as the channel and 50-nm in-situ Al2 O3 as the gate dielectric. The threshold voltage of the device on bulk GaN substrate was 1 V measured at Ion/Ioff = 107. The OG-FET with an area scaled to 0.2 mm2 demonstrated...