Consideration of gate insulator on 4H-SiC Si face using a SiNx layer by ALDTeruaki Kumazawa, Mituo Okamoto,Miwako Iijima,Yohei Iwahashi, Shinzi Fujikake,Tsuyoshi Araoka, Tae Tawara,Hiroshi Kimura,Shinsuke Harada,Hajime OkumuraThe Japan Society of Applied Physics(2018)引用 23|浏览6暂无评分关键词SiC NanowiresAI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要