Effect of oxygen pressure on the semiconductor properties of FTO thin films
2017 29th International Conference on Microelectronics (ICM)(2017)
摘要
In this paper, the Optical and Semiconductor properties of epitaxial thin films of Fe
2−x
Ti
x
O
3-δ
, deposited on SrTiO
3
(001) by pulsed laser deposition (PLD) are studied. We use Perlin Elmer 9500 spechtrophotometer in order to measure the optical transmission and reflection. The prepared films using oxygen pressure PO2 above 3 ∗ 10
−7
Torr, presents a R(3) symmetry structure. The prepared samples present a deficiency δ = 0.35. The optical properties show a very important dependence with the oxygen cation stoichiometry. These last properties, which are dominated by the oxygen deficiency obtained during the growth of thin films, show a semiconductor behavior where the conductivity increase more with S than by the atomic ordering of titanium.
更多查看译文
关键词
semiconductor properties,pulsed laser deposition,optical transmission,R(3) symmetry structure,optical properties,oxygen cation stoichiometry,oxygen deficiency,FTO thin films,optical reflection,epitaxial thin films,oxygen pressure effect,Perlin Elmer 9500 spechtrophotometry,atomic ordering,electrical conductivity,Fe2TiO3,SrTiO3
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要