Record performance Top-down In 0.53 Ga 0.47 As vertical nanowire FETs and vertical nanosheets

We report high performance, dry etched In 0.53 Ga 0.47 As vertical nanowire and vertical nanosheet devices, fabricated using a VLSI compatible process flow. Scaling the effective-oxide-thickness in combination with (NH4)2S channel treatment and forming gas anneal improves the device performance, in terms of Q (Gm/SS), by over 55%. At V DS = 0.5V, the devices exhibit a minimum SS = 63mV/dec, I on = 397μA/μm at Ioff = 100nA/μm, peak Gm = 1.6mS/μm and maximum Q = 21. These values are the best reported in literature for vertical IIIV devices. A reliability analysis puts these vertical MOSFETs in line with other IIIV devices with similar gate stack, indicating that the process flow does not introduce additional interface defects.