Response improvement of In 2 O 3 hot-wire gas sensor doped by Sn

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS(2018)

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摘要
A simple co-precpitation method was used to synthesize Sn-doped In 2 O 3 materials, with InCl 3 ·4H 2 O as the precursor and SnCl 4 ·5H 2 O as the dopant source. The morphology and structure of the synthesized nanoparticles were examined by X-ray diffraction and scanning electron microscopy (SEM), respectively. Moreover, we investigated the electrochemical properties of the synthesized nanoparticles by electrochemical impedance spectroscopy. The hot-wire type gas sensors based on Sn-doped In 2 O 3 nanoparticles were fabricated, then gas-sensing properties were examined and the gas-sensing mechanism was discussed. SEM observation revealed that the composite nanoparticles had a uniform size in range of 9–20 nm. The responses of the ITO nanocrystalline sensors at 100 ppm ethanol were improved from 256 to 701 mV at 11.1 wt%. Furthermore, the response and recovery time of the ITO nanocrystalline sensors were 15 and 30 s, respectively. The gas-sensing mechanism analysis showed that the electrical conductivity of In 2 O 3 was obviously increased by doping with Sn, thus the responses of the gas sensors to ethanol were significantly improved.
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关键词
sensor,sn,hot-wire
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