Dependence of ${V}_{\text {TH}}$ Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET

In this letter, we investigated the threshold voltage VTH stability under reverse-bias step-stress in the E-mode LPCVD-SiNx/PECVD-SiNx/GaN MIS-FET. Under the OFF-state reverse-bias stress with the same net gate-todrain voltage (VGD), the VTH shift shows an obvious dependence on the negative gate bias. With a VGS of 0 V, the VTH shift is small and recoverable, while the VTH shifts are substantially...