Surface Morphology of AlSb on GaAs Grown by Molecular Beam Epitaxy and Real-time Growth Monitoring by in situ Ellipsometry

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. We report the effect of growth temperature on structural properties of AlSb grown on GaAs substrate. In particular we studied the surface of AlSb with the growth temperature by atomic force microscopy, and concluded that optimized growth temperature of AlSb is 530 degrees C. We also show the result of real-time monitoring of AlSb growth by in situ ellipsometry. The results of the structural study are good agreement with the previous reported ellipsometric data.