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Observation of Single-Event Burnout During Inductive Switching

Leif Z. Scheick,Greg Allen,Larry D. Edmonds,Rembrandt Schaefer, Rob Menke

IEEE Transactions on Nuclear Science（2018）

Cited 1|Views7
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Abstract
A power MOSFET demonstrated destructive single-event effect (SEE) during ion irradiation in a switching circuit. Further investigation showed that the inductive load causing a spike in the drain-to-source voltage (VDS) that exceeded the manufacturer's rating for several nanoseconds was enough to allow single-event effect (SEB). These results indicate that SEB may occur in a very short window and f...
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Key words
Ions,MOSFET,Protons,Logic gates,Testing,Voltage measurement,Power supplies
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