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Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model

IEEE Transactions on Nuclear Science(2018)

Cited 17|Views66
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Abstract
Muon-induced single-event upset cross sections are estimated for a 28-nm static random access memory (SRAM) using Monte Carlo simulations informed by ion test results. As an exercise in modeling with limited information, details of the 28-nm SRAM's cell structure were not used (and not available) to inform choices of device model parameters such as sensitive volume dimensions and efficiencies. Ins...
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Key words
Protons,Ions,Mesons,Random access memory,Predictive models,Data models,Neutrons
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