In situ bismuth-modified gallium nitride electrode for sensitive determination of cadmium (II) with high repeatability
Journal of Electroanalytical Chemistry(2018)
摘要
Bismuth-modified gallium nitride (Bi/GaN) electrode was fabricated using an in situ plating technique and simultaneously investigated for the detection of Cd2+ by square wave anodic stripping voltammetry (SWASV). Under the optimized conditions, the Bi/GaN electrode showed good linear amperometric responses for Cd2+ in the concentration range from 1 to 150μg/L. The sensitivity was 0.54418μALμg−1 (i.e., 59.8598AM−1) and the limit of detection (LOD) was 0.3μg/L (i.e., 2.72nM). Furthermore, the as-prepared Bi/GaN sensor has high repeatability, and retains 95% of its initial stripping peak current after 50cycles. More importantly, the applicability of the sensor in real samples such as tap water, milk, and fetal bovine serum was researched. The recovery ranges from 92.3 to 106.7%, indicating that the as-fabricated Bi/GaN sensor has potential to monitor Cd2+ in practical environments.
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关键词
Gallium nitride,Bismuth,Square wave anodic stripping voltammetry,Cadmium (II)
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