Negative Capacitance Carbon Nanotube FETs

IEEE Electron Device Letters(2018)

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摘要
As continued scaling of silicon FETs grows increasingly challenging, alternative paths for improving digital system energy efficiency are being pursued. These paths include replacing the transistor channel with emerging nanomaterials (such as carbon nanotubes), as well as utilizing negative capacitance effects in ferroelectric materials in the FET gate stack, e.g., to improve sub-threshold slope b...
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关键词
CNTFETs,Logic gates,Capacitance,Dielectrics,Hafnium compounds
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