Investigation of ionizing transients by femtosecond X-ray source ionization

M.P. Belova,L.N. Kessarinskiy,A.Y. Borisov,Alexander I. Chumakov,D. V. Boychenko,K.A. Ivanov,I.N. Tsymbalov,R. V. Volkov,A.B. Savel'ev

2017 IEEE 30th International Conference on Microelectronics (MIEL)（2017）

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摘要

The paper presents the experimental results of the ionizing response in p-i-n diode and operational amplifier under femtosecond X-ray pulse. TW Ti:Sa femtosecond laser facility was used to create X-ray radiation. Possibility of this facility to simulate SEE is discussed.

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关键词

p-i-n diode,TW titanium:Sa femtosecond laser facility,operational amplifier,femtosecond X-ray source ionization,Ti

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