Effect Of Cu And Sn Additives On Physical And Dielectric Properties Of Se75te25 Glassy Alloy

The effect of Cu and Sn additives on physical and dielectric properties of Se75Te25 glassy alloy has been investigated. It is inferred that on addition of Cu and Sn content, the physical properties i.e., average coordination number, average number of constraints and Average heat of atomization increases but lone pair of electrons, Fraction of floppy modes, Electronegativity, Degree of crosslinking and Deviation of stoichiometry (R) decreases. The effect of Cu and Sn doping on the dielectric properties, i.e., dielectric constant (epsilon') and dielectric loss (epsilon ''), of a bulk Se75Te25 glassy alloy has been also studied in the temperature range 300 K-350 K for different frequencies (1 KHz-5 MHz). It is found that the dielectric constant (epsilon') and dielectric loss (epsilon '') both increases with increase in temperature and decreases with increase in frequency. The decrease in both of the dielectric parameters is also being found with aforesaid impurities in Se75Te25 glassy system. The peculiar role of Cu and Sn, individually as an impurity in pure binary Se75Te25 glassy alloy has also been discussed in terms of electronegativity difference between the elements used in making the aforesaid glassy systems.