Modal Gain Investigation On The Gaas-Based Inas/Ingaas Quantum Dot Mode-Locked Laser

30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC)(2017)

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摘要
InAs/InGaAs quantum dot mode-locked lasers are fabricated and characterized. The modal gain as the saturable absorber voltage (SAV) changes is investigated. The ground state lasing dominates at low SAV, and excited state transition emerges when SAV increases.
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关键词
Quantum dot lasers, Mode-locked lasers, Modal gain
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