Proton Radiation Effects Assessment of a Commercial 12-Megapixel CMOS Imager

Randall Milanowski,Raichelle Aniceto, Fred Hardy,Bert Vermeire, Michael Jacox,Slaven Moro,Kerri Cahoy

2017 IEEE Radiation Effects Data Workshop (REDW)（2017）

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摘要

Commercial off-the-shelf 12-Megapixel CMOS image sensors were irradiated with 105 MeV protons - one part to a fluence of 4×10 ¹¹ protons/cm ² , and a second part to 2×10 ¹¹ protons/cm ² . Pixel brightness increases with fluence along with annealing effects are reported. No latch-up events or hangs occurred.

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关键词

proton radiation effects assessment,annealing effects,CMOS imager,CMOS image sensors,electron volt energy 105.0 MeV

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