Some properties of only-SBUs scenarios in SRAMs applied to the detection of MCUs
2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS)(2016)
摘要
Statistical properties of experiments in SRAMs with only SBUs are mathematically evaluated. Strategies using deviations of actual data from theory are proposed to extract MCUs from the bulk of errors regardless the SRAM internal structure.
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关键词
Multiple cell upsets,single bit upsets,single events,soft errors,SRAMs
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