Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing

Yijun Sun,Zhiyuan Cheng,Qiang Zhou,Ying Sun,Jiabao Sun,Yanhua Liu,Meifang Wang,Zhen Cao,Zhi Ye,Mingsheng Xu,Yong Ding,Peng Chen,M. Heuken,Takashi Egawa

Journal of Crystal Growth（2018）

引用 2|浏览37

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摘要

•Effects of RTA on PL peak energy of GaNAs/GaAs MQWs grown by CBE are investigated.•Redshift and blueshift of PL peak energy are observed experimentally.•The redshift and the blueshift can be quantitatively explained by a modified model.•The model proposed can also quantitatively explain the results from other group.

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关键词

A3. Chemical beam epitaxy,B2. Semiconducting III–V materials,A3. Quantum wells,A1. Optical properties,A1. Rapid thermal annealing

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