Scaling Effects on Single-Event Transients in InGaAs FinFETs

The single-event-transient response of InGaAs FinFETs with different fin widths is examined using pulsed-laser and heavy-ion irradiation. Devices with wider fins collect more charge in both environments. Quantum-well structures confine charge collection in the channel, and determine the sensitive volume. Simulations show that the charge density produced by irradiation is similar for devices with d...