Scaling Effects on Single-Event Transients in InGaAs FinFETs
IEEE Transactions on Nuclear Science(2018)
Abstract
The single-event-transient response of InGaAs FinFETs with different fin widths is examined using pulsed-laser and heavy-ion irradiation. Devices with wider fins collect more charge in both environments. Quantum-well structures confine charge collection in the channel, and determine the sensitive volume. Simulations show that the charge density produced by irradiation is similar for devices with d...
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Key words
FinFETs,Indium gallium arsenide,Transient analysis,Logic gates,Radiation effects,Ions,Substrates
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