Comparison Of Single Event Transients In Algan/Gan Schottky-Gate And Mis-Gate Hemts Using Single-Photon Absorption And Focused X-Ray Techniques

Ani Khachatrian,Nicolas J-H. Roche,Stephen P. Buchner,Andrew D. Koehler,Travis J. Anderson,Jeffrey H. Warner,Paul D. Cunningham,Joseph. S. Melinger,Dale Mcmorrow,Steven D. Lalumondiere,N. P. Wells, M. A. Tockstein, D. L. Brewe, E. C. Dillingham, J. P. Bonsall, P. Karuza,W. T. Lotshaw,S. C. Moss

2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS)（2016）

Cited 0|Views54

No score

Abstract

Single Photon Absorption technique with ultraviolet pulsed laser and focused X-ray beam is used to investigate single event transients in pristine AlGaN/GaN Schottky-Gate and MIS-Gate HEMTs. The results depend strongly on structure of devices.

Translated text

Key words

charge generation,GaN,HEMT,laser testing,single-photon absorption,single-event transients

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined