Switching Transient Analysis for Normally- off GaN Transistor With p-GaN Gate in a Phase-Leg Circuit
IEEE Transactions on Power Electronics(2019)
Abstract
Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky junction (between gate electrode and the p-GaN layer) and a p-GaN/AlGaN/GaN heterojunction. As the p-GaN layer is not directly shorted to the gate electrode and conducting channel, it can be considered as electrical...
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Key words
Logic gates,Capacitance,Switches,Junctions,Gallium nitride,Temperature measurement,Current measurement
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