Nanoscale MOSFET Modeling: Part 2: Using the Inversion Coefficient as the Primary Design Parameter

IEEE Solid-State Circuits Magazine(2017)

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Abstract
This article illustrates the use of the inversion coefficient (IC) as the main design parameter to explore the various tradeoffs faced in the design of analog circuits. We start with showing that the same transconductance, gain-bandwidth (GBW) product, or input-referred thermal noise resistance of a common-source (CS) amplifier can be achieved with lower current by shifting the IC toward moderate ...
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Key words
Transistors,Transconductance,Capacitance,Inverse problems,Integrated circuit modeling,Semiconductor device modeling,Tutorials
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