The heavy ion radiation effects on the Pt/HfO2/Ti resistive switching memory

In this article, the resistive random access memory (RRAM) with the structure of Pt/HfO ₂ /Ti is investigated for applications in radiation circumstance. The heavy ion ⁸⁶ Kr ²⁶⁺ of HIRFL (The Heavy Ion Research Facility in Lanzhou) is used as the radiation source. The energy of ⁸⁶ Kr ²⁶⁺ is 25 MeV/u, the LET is 37.6 MeV/(cm ² /mg), and the fluence of 5e11 is achieved after 2 hours radiation. Basic performance of the Pt/HfO ₂ /Ti is compared before and after radiation. An obvious decrease is shown in the original resistance value after radiation, and the forming process is no longer needed. The HRS, LRS, transition voltage and endurance are still stable after radiation.